bfp690 oct-30-2002 1 npn silicon germanium rf transistor preliminary data for medium power amplifiers maxim. available gain g ma = 17 db at 1.8 ghz gold metallization for high reliability 70 ghz f t - silicon germanium technology vpw05980 1 2 3 5 4 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package bfp690 r9s 1=b 2=e 3=c 4=c 5=e - sct595 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 4 v collector-emitter voltage v ces 13 collector-base voltage v cbo 13 emitter-base voltage v ebo 1.2 collector current i c 350 ma base current i b 20 total power dissipation 1) t s 80c p tot 1000 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) r thjs 60 k/w 1 t s is measured on the collector lead at the soldering point to the pcb 2 for calculation of r thja please refer to application note thermal resistance
bfp690 oct-30-2002 2 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 a v (br)ceo 4 4.5 - v collector-base cutoff current v cb = 5 v, i e = 0 a i cbo - - 100 na emitter-base cutoff current v eb = 0.5 v, i c = 0 a i ebo - - 10 a dc current gain i c = 200 ma, v ce = 3 v h fe 100 180 250 -
bfp690 oct-30-2002 3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 200 ma, v ce = 3 v, f = 0.5 ghz f t - 37 - ghz collector-base capacitance v cb = 3 v, f = 1 mhz c cb - 0.6 - pf collector emitter capacitance v ce = 3 v, f = 1 mhz c ce - 1.25 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 3 - noise figure i c = 35 ma, v ce = 3 v, f = 1.8 ghz, z s = z sopt i c = 35 ma, v ce = 3 v, f = 3 ghz, z s = z sopt f - - 1 1.2 - - db power gain, maximum available 1) i c = 200 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 1.8 ghz i c = 200 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 3 ghz g ma - - 17.5 13 - - transducer gain i c = 200 ma, v ce = 3 v, z s = z l = 50 , f = 1.8 ghz i c = 200 ma, v ce = 3 v, z s = z l = 50 , f = 3 ghz | s 21e | 2 - - 11 6.5 - - db third order intercept point at output 2) v ce = 3 v, i c = 200 ma, f = 1.8 ghz, z s = z l = 50 ip 3 - 29 - dbm 1db compression point at output i c = 200 ma, v ce = 3 v, z s = z l = 50 , f = 1.8 ghz p -1db - 19.5 - 1 g ma = | s 21 / s 12 | (k-(k2-1) 1/2 ) 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 from 0.1 mhz to 6 ghz
bfp690 oct-30-2002 4 spice parameter (gummel-poon model, berkley-spice 2g.6 syntax): transitor chip data: is = 1.41 fa vaf = 1000 - ne = 2 var = 2v nc = 1.8 - rbm = 0.3836 cje = 1.592 ff tf = 1.9 ps itf = 2.9 a vjc = 0.6 v tr = 0.2 ns mjs = 0.27 - xti = 3- af = 2- titf1 -0.0065 - bf = 450 - ikf = 0.9 a br = 40 - ikr = 45 ma rb = 0.4442 re = 0.14 - vje = 0.8 v xtf = 5 - ptf = 0 deg mjc = 0.5 - cjs = 688.1 ff nk = -1.42 - fc = 0.8 kf = 1.046e-11 titf2 1.0e-5 nf = 1.025 - ise = 145 fa nr = 1- isc = 1.2 pa irb = 10.61 ma rc = 0.4312 mje = 0.3 - vtf = 0.6 v cjc = 477.5 ff xcjc = 1- vjs = 0.6 v eg = 1.078 ev tnom 298 k all parameters are ready to use, no scalling is necessery. extracted on behalf of infineon technologies ag by: institut fr mobil- und satellitentechnik (imst) package equivalent circuit:
! " # lbc = 15 ph lcc = 4 ph lec = 4 ph lbb = 900 ph lcb = 700 ph leb = 130 ph cbec = 864.4 ff cbcc = 399.9 ff ces = 450 ff cbs = 535 ff ccs = 135 ff cceo = 130 ff rbs = 190 rcs = 340 res = 340 for examples and ready to use parameters please contact your local infineon technologies distributor or sales office to obtain a infineon technologies cd-rom or see internet: http//www.infineon.com/silicondiscretes valid up to 6ghz
bfp690 oct-30-2002 5 total power dissipation p tot = ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 100 200 300 400 500 600 700 800 900 mw 1100 p tot permissible pulse load r thjs = ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 c t p 0 10 1 10 2 10 k/w r thjs d = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 permissible pulse load p totmax / p totdc = ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 collector-base capacitance c cb = ( v cb ) f = 1mhz 0 2 4 6 8 10 v 13 v cb 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 pf 2 c cb
bfp690 oct-30-2002 6 transition frequency f t = ( i c ) f = 0.5ghz v ce = parameter in v 0 50 100 150 200 250 300 ma 400 i c 0 5 10 15 20 25 30 35 ghz 45 f t 3 to 4 2 1 0.7 power gain g ma , g ms = ( f ), | s 21 |2 = f (f) v ce = 3v, i c = 200ma 0 1 2 3 4 ghz 6 f -5 0 5 10 15 20 25 30 35 40 45 db 55 g gms gma |s21|2 power gain g ma , g ms = ( i c ) v ce = 3v f = parameter 0 50 100 150 200 250 300 ma 400 i c 4 6 8 10 12 14 16 18 20 22 24 db 28 g 0.9 1.8 2.4 3 4 5 6 power gain g ma , g ms = ( v ce ) i c = 200ma f = parameter in ghz 0.5 1 1.5 2 2.5 3 3.5 v 4.5 v ce 0 5 10 15 20 db 30 g 0.9 1.8 2.4 3 4 5 6
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